Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application

Piotr Firek; Piotr Wysokiński

doi:10.1117/12.2261660

22 December 2016 Manufacturing of HfO_xN_y films using reactive magnetron sputtering for ISFET application

Piotr Firek, Piotr Wysokiński

Proceedings Volume 10175, Electron Technology Conference 2016; 1017507 (2016) https://doi.org/10.1117/12.2261660
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O₂/N₂/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (R_a=0.2÷1,0 nm). Thickness of HfO_XN_Y films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage U_FB, dielectric constant K_i, interface state trap density D_it and effective charge Q_eff. Subsequently, deposited HfO_xN_y layers were annealed in PDA process (40 min 400 °C 100% N₂) after which the electrical characterization was performed again.

Citation Download Citation

Piotr Firek and Piotr Wysokiński "Manufacturing of HfO_xN_y films using reactive magnetron sputtering for ISFET application", Proc. SPIE 10175, Electron Technology Conference 2016, 1017507 (22 December 2016); https://doi.org/10.1117/12.2261660

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