Simulation of electrical characteristics of GaN vertical Schottky diodes

Lidia Łukasiak; Jakub Jasiński; Andrzej Jakubowski

doi:10.1117/12.2260777

22 December 2016 Simulation of electrical characteristics of GaN vertical Schottky diodes

Lidia Łukasiak, Jakub Jasiński, Andrzej Jakubowski

Proceedings Volume 10175, Electron Technology Conference 2016; 101750B (2016) https://doi.org/10.1117/12.2260777
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

Citation Download Citation

Lidia Łukasiak, Jakub Jasiński, and Andrzej Jakubowski "Simulation of electrical characteristics of GaN vertical Schottky diodes", Proc. SPIE 10175, Electron Technology Conference 2016, 101750B (22 December 2016); https://doi.org/10.1117/12.2260777

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