Paper
22 December 2016 New silicon photodiodes for detection of the 1064nm wavelength radiation
Maciej Węgrzecki, Tadeusz Piotrowski, Zbigniew Puzewicz, Jan Bar, Ryszard Czarnota, Rafal Dobrowolski, Andrii Klimov, Jan Kulawik, Helena Kłos, Michał Marchewka, Marek Nieprzecki, Andrzej Panas, Bartłomiej Seredyński, Andrzej Sierakowski, Wojciech Słysz, Beata Synkiewicz, Dariusz Szmigiel, Michał Zaborowski
Author Affiliations +
Proceedings Volume 10175, Electron Technology Conference 2016; 101750Y (2016) https://doi.org/10.1117/12.2257557
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland
Abstract
In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described.

Electric and photoelectric parameters of the photodiodes mentioned above are presented.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maciej Węgrzecki, Tadeusz Piotrowski, Zbigniew Puzewicz, Jan Bar, Ryszard Czarnota, Rafal Dobrowolski, Andrii Klimov, Jan Kulawik, Helena Kłos, Michał Marchewka, Marek Nieprzecki, Andrzej Panas, Bartłomiej Seredyński, Andrzej Sierakowski, Wojciech Słysz, Beata Synkiewicz, Dariusz Szmigiel, and Michał Zaborowski "New silicon photodiodes for detection of the 1064nm wavelength radiation", Proc. SPIE 10175, Electron Technology Conference 2016, 101750Y (22 December 2016); https://doi.org/10.1117/12.2257557
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KEYWORDS
Photodiodes

Silicon

Photomasks

Aluminum

Mirrors

Photons

Reflectivity

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