HfO2/Pr2O3 gate dielectric stacks

F. Sidorov; A. Molchanova; A. Rogozhin

doi:10.1117/12.2266784

30 December 2016 HfO₂/Pr2O₃ gate dielectric stacks

F. Sidorov, A. Molchanova, A. Rogozhin

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022402 (2016) https://doi.org/10.1117/12.2266784
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

Electrical properties of MOS structures based on molecular beam epitaxy formed HfO₂/Pr₂O₃ gate dielectric stacks have been studied by CV, GV and IV characteristics. Electrical properties of the structures with HfO₂/Pr₂O₃ and PEALD HfO₂ dielectric layers were compared. Higher gate leakage current and lower interface trap level density in the structure with HfO₂/Pr₂O₃ dielectric layer was observed.

Citation Download Citation

F. Sidorov, A. Molchanova, and A. Rogozhin "HfO₂/Pr2O₃ gate dielectric stacks", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022402 (30 December 2016); https://doi.org/10.1117/12.2266784

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