Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

Stanislav A. Shostachenko; Roman V. Zakharchenko; Roman V. Ryzhuk; Darya A. Kulyamina; Nikolay I. Kargin

doi:10.1117/12.2267053

30 December 2016 Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

Stanislav A. Shostachenko, Roman V. Zakharchenko, Roman V. Ryzhuk, Darya A. Kulyamina, Nikolay I. Kargin

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022403 (2016) https://doi.org/10.1117/12.2267053
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10^-6 Ω·cm² was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

Citation Download Citation

Stanislav A. Shostachenko, Roman V. Zakharchenko, Roman V. Ryzhuk, Darya A. Kulyamina, and Nikolay I. Kargin "Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022403 (30 December 2016); https://doi.org/10.1117/12.2267053

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