Metal-assisted chemical etching of silicon with different metal films and clusters: a review

O. Pyatilova; S. Gavrilov; A. Sysa; A. Savitskiy; A. Shuliatyev; A. Dudin; A. Pavlov

doi:10.1117/12.2266862

30 December 2016 Metal-assisted chemical etching of silicon with different metal films and clusters: a review

O. Pyatilova, S. Gavrilov, A. Sysa, A. Savitskiy, A. Shuliatyev, A. Dudin, A. Pavlov

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022405 (2016) https://doi.org/10.1117/12.2266862
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

In this work we provided a review of the study of MACE (metal-assisted chemical etching) of Si with Ag, Pt, Ni and Au films and clusters. Type and shape of the metal mask play an important role in determination of morphology of the nanostructured layer. It is possible to form both wide range of porous layer and nanowires array. The basic features of the MACE with various types and shape of the metal were revealed.

Citation Download Citation

O. Pyatilova, S. Gavrilov, A. Sysa, A. Savitskiy, A. Shuliatyev, A. Dudin, and A. Pavlov "Metal-assisted chemical etching of silicon with different metal films and clusters: a review", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022405 (30 December 2016); https://doi.org/10.1117/12.2266862

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