Chemical surface treatment of Ge2Sb2Te5 thin films for phase change memory application

M. S. Mikhailova; S. Y. Nemtseva; V. B. Glukhenkaya; P. I. Lazarenko; A. A. Sherchenkov; S. A. Kozyukhin; S. P. Timoshenkov

doi:10.1117/12.2267157

30 December 2016 Chemical surface treatment of Ge₂Sb₂Te₅ thin films for phase change memory application

M. S. Mikhailova, S. Y. Nemtseva, V. B. Glukhenkaya, P. I. Lazarenko, A. A. Sherchenkov, S. A. Kozyukhin, S. P. Timoshenkov

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Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240F (2016) https://doi.org/10.1117/12.2267157
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

Influence of the alkalis (KOH, NaOH), acids (HNO₃, HCl, H₃PO₄, H₂SO₄) and solvents (C₃H₇NO, deionized water) on the Ge₂Sb₂Te₅ thin films was investigated. Most possible etching mechanism of GST225 thin films by HNO₃ solution was proposed.

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M. S. Mikhailova, S. Y. Nemtseva, V. B. Glukhenkaya, P. I. Lazarenko, A. A. Sherchenkov, S. A. Kozyukhin, and S. P. Timoshenkov "Chemical surface treatment of Ge₂Sb₂Te₅ thin films for phase change memory application", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240F (30 December 2016); https://doi.org/10.1117/12.2267157

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