Compact modeling of radiation-induced drain leakage current

M. G. Drosdetsky; V. V. Orlov; G. I. Zebrev

doi:10.1117/12.2267161

30 December 2016 Compact modeling of radiation-induced drain leakage current

M. G. Drosdetsky, V. V. Orlov, G. I. Zebrev

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022415 (2016) https://doi.org/10.1117/12.2267161
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

A compact MOSFET model is described, which is adapted to simulate the drain current under irradiation.

Citation Download Citation

M. G. Drosdetsky, V. V. Orlov, and G. I. Zebrev "Compact modeling of radiation-induced drain leakage current", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022415 (30 December 2016); https://doi.org/10.1117/12.2267161

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