A study of the vertical walls and the surface roughness GaAs after the operation in the combined plasma etching

Viktor S. Klimin; Maxim S. Solodovnik; Vladimir A. Smirnov; Andrey V. Eskov; Roman V. Tominov; Oleg A. Ageev

doi:10.1117/12.2267120

30 December 2016 A study of the vertical walls and the surface roughness GaAs after the operation in the combined plasma etching

Viktor S. Klimin, Maxim S. Solodovnik, Vladimir A. Smirnov, Andrey V. Eskov, Roman V. Tominov, Oleg A. Ageev

Author Affiliations +

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241Z (2016) https://doi.org/10.1117/12.2267120
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

The paper presents the experimental results of the combination of AFM lithography and plasma chemical etching the surface of the gallium arsenide samples. Results dilution and application modes for AFM lithography photoresist, also shown on the image forming modes photoresist surface. Showing results nanoprofilirovaniya surface. Results regimes plasma chemical etching. The analysis of the etching rate is etched surface roughness was studied by atomic force microscopy. Judged from the vertical deflection angle of the initial structures and photoresist obtained after etching.

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Viktor S. Klimin, Maxim S. Solodovnik, Vladimir A. Smirnov, Andrey V. Eskov, Roman V. Tominov, and Oleg A. Ageev "A study of the vertical walls and the surface roughness GaAs after the operation in the combined plasma etching", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241Z (30 December 2016); https://doi.org/10.1117/12.2267120

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