Method of stress and measurement modes for research of thin dielectric films of MIS structures

Vladimir V. Andreev; Vladimir M. Maslovsky; Dmitrii V. Andreev; Alexander A. Stolyarov

doi:10.1117/12.2267173

30 December 2016 Method of stress and measurement modes for research of thin dielectric films of MIS structures

Vladimir V. Andreev, Vladimir M. Maslovsky, Dmitrii V. Andreev, Alexander A. Stolyarov

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022429 (2016) https://doi.org/10.1117/12.2267173
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

The paper proposes a new method of stress and measurement modes for research of thin dielectric films of MIS structures. The method realizes injection of the most part of charge into gate dielectric in one of stress modes: either current owing through dielectric is constant or voltage applied to gate is constant. In order to acquire an additional information about changing of charge state of MIS structure, the stress condition is interrupted in certain time ranges and during these time ranges the mode, in which structure is, is the mode of measurement. In measurement mode, changing of electric fields at interfaces between dielectric and semiconductor is monitored. By using these data, density of charge, which is accumulated in gate dielectric, and its centroid are calculated. Besides, by using these data, one studies processes of generation and relaxation of charge in dielectric. In order to raise precision of the method and reduce an influence of switching effects in measurement mode, density of measurement current should be much lower than density of stress current.

Citation Download Citation

Vladimir V. Andreev, Vladimir M. Maslovsky, Dmitrii V. Andreev, and Alexander A. Stolyarov "Method of stress and measurement modes for research of thin dielectric films of MIS structures", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022429 (30 December 2016); https://doi.org/10.1117/12.2267173

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available