On the Einstein relation under size quantization in heterostructures semiconductor

Subhamoy Singha Roy

doi:10.1117/12.2249554

27 January 2017 On the Einstein relation under size quantization in heterostructures semiconductor

Subhamoy Singha Roy

Proceedings Volume 10111, Quantum Sensing and Nano Electronics and Photonics XIV; 1011133 (2017) https://doi.org/10.1117/12.2249554
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

With the advent of modern experimental techniques the low dimensional structures having quantum confinement in one, two and three dimensions such as (quantum well (QWs), quantum well wires (QWWs) and quantum dots (QDs) ultrathin films have in the last few years attached much attention not only because of their potential in uncovering new phenomena in computational and theoretical nanoscience but also for new technological applications. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the films leads to the quantum size effect allowing two-dimensional carrier transport parallel to the surface of the film. In this context I shall study the DMR in ultrathin films of IIIV semiconductors.

Citation Download Citation

Subhamoy Singha Roy "On the Einstein relation under size quantization in heterostructures semiconductor", Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011133 (27 January 2017); https://doi.org/10.1117/12.2249554

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