Nanomanipulation device fabrication: multilayerd graphene and OFET devices

C. Coleman; S. Khorasani; S. Ncube; D. Mtsuko; C. Botha; C. Sandrock; M. Fernandes; D. Levendis; S. Bhattacharyya

doi:10.1117/12.2245446

3 February 2017 Nanomanipulation device fabrication: multilayerd graphene and OFET devices

C. Coleman, S. Khorasani, S. Ncube, D. Mtsuko, C. Botha, C. Sandrock, M. Fernandes, D. Levendis, S. Bhattacharyya

Proceedings Volume 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems; 1003608 (2017) https://doi.org/10.1117/12.2245446
Event: Fourth Conference on Sensors, MEMS and Electro-Optic Systems, 2016, Skukuza, Kruger National Park, South Africa

Abstract

We utilize nano-manipulting probes for the fabrication of a range of devices including multilayered graphene coplanar waveguides, suspended multilayered graphene hall bars and air-gap single crystal organic field effect transistors. We find that devices fabricated using this technique are of high quality and can be used to probe not only application based phenomena (such as transistor behaviour), but also fundamental quantum transport properties. Magnetoresistance measurements show that the multilayered graphene devices exhibit either quantum linear magnetoresistance (QLMR) or Shubnikov de-Haas oscillations depending on the topology (i.e. either wrinkled or smooth) of the graphene sheet. From this data we calculate the carrier density (ns) in the wrinkled graphene to be in the range 5.2 × 10⁹ cm^-2 (at B~0) to 3.5 × 10¹³ cm^-2 (at B=12 T) with effective masses of 0.001m_e and 0.121m_e, respectively. The smooth multilayer graphene devices have a carrier density 1.39 - 2.85 × 10¹² cm^-2 and effective mass (0.022m_e ≤ m*≤ 0.032m_e) as calculated from the analysis of the Shubnokov de-Haas oscillations. The high frequecny coplanar waveguide devices fabricated using this technique demonstrated high transmission up to 50 GHz, highlighting the potential for HF application. Organic field effect transistors were also fabricated using the manipulation technique, the transfere characteristics were measured, it was found that the devcies with channel length of 1 μm have non-linear transfere characterisitcs and pass a maximum current of between 0.1 and 10 nA. These OFET devices showed pronounced switching behaviour with mobilities of up to 3 cm²V^-1s^-1 in the best devices.

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C. Coleman, S. Khorasani, S. Ncube, D. Mtsuko, C. Botha, C. Sandrock, M. Fernandes, D. Levendis, and S. Bhattacharyya "Nanomanipulation device fabrication: multilayerd graphene and OFET devices ", Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003608 (3 February 2017); https://doi.org/10.1117/12.2245446

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KEYWORDS

Graphene

Field effect transistors

Crystals

Multilayers

Fabrication

Electrodes

Nanomanipulation

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