Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Alice Hospodková; Jiří Pangrác; Karla Kuldová; Martin Nikl; Oliva Pacherová; Jiří Oswald; Tomáš Hubáček; Markéta Zíková; Petr Brůža; Dalibor Pánek; Karel Blažek; Gilles Ledoux; Christophe Dujardin; Michael Heuken; Eduard Hulicius

doi:10.1117/12.2244786

3 February 2017 Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Alice Hospodková, Jiří Pangrác, Karla Kuldová, Martin Nikl, Oliva Pacherová, Jiří Oswald, Tomáš Hubáček, Markéta Zíková, Petr Brůža, Dalibor Pánek, Karel Blažek, Gilles Ledoux, Christophe Dujardin, Michael Heuken, Eduard Hulicius

Author Affiliations +

Proceedings Volume 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems; 1003617 (2017) https://doi.org/10.1117/12.2244786
Event: Fourth Conference on Sensors, MEMS and Electro-Optic Systems, 2016, Skukuza, Kruger National Park, South Africa

Abstract

Fast scintillators are necessary for electron microscopes, as well as in many other application fields like medical diagnostics and therapy and fundamental science. InGaN/GaN multiple quantum well structures (QW) are perspective candidates due to strong exciton binding energy, high quantum efficiency, short decay time in order of ns and good radiation resistance. The aim of our work is to prepare scintillator structure with fast luminescence response and high intensity of light.

InGaN/GaN multiple QW structures described here were prepared by metal-organic vapour phase epitaxy and characterized by high resolution X-ray diffraction measurements. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source in extended dynamical and time scales. The photo-, radio- and cathodo-luminescence (PL, RL, CL) were measured. We observed double peak luminescence governed by different recombination mechanisms: i) exciton in QW and ii) related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased 4 times from 16 ns to 4 ns when the QW thickness was decreased from 2.4 nm to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum.

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Alice Hospodková, Jiří Pangrác, Karla Kuldová, Martin Nikl, Oliva Pacherová, Jiří Oswald, Tomáš Hubáček, Markéta Zíková, Petr Brůža, Dalibor Pánek, Karel Blažek, Gilles Ledoux, Christophe Dujardin, Michael Heuken, and Eduard Hulicius "Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications", Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003617 (3 February 2017); https://doi.org/10.1117/12.2244786

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