InGaN-based flexible light emitting diodes

C. Bayram

doi:10.1117/12.2251618

16 February 2017 InGaN-based flexible light emitting diodes

C. Bayram

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101041Y (2017) https://doi.org/10.1117/12.2251618
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Novel layer release and transfer technology of single-crystalline GaN semiconductors is attractive for enabling many novel applications including flexible photonics and hybrid device integration. To date, light emitting diode (LED) research has been primarily focused on rigid devices due to the thick growth substrate. This prevented fundamental research in flexible inorganic LEDs, and limited the applications of LEDs in the solid state lighting (due to the substrate cost) and in biophotonics (i.e. optogenetics) (due to LED rigidness). In the literature, a number of methods to achieve layer transfer have been reported including the laser lift-off, chemical lift-off, and Smartcut. However, the release of films of LED layers (i.e. GaN semiconductors) has been challenging since their elastic moduli and chemical resistivity are much higher than most conventional semiconductors. In this talk, we are going to review the existing technologies and new mechanical release techniques (i.e. spalling) to overcome these problems.

Conference Presentation

Citation Download Citation

C. Bayram "InGaN-based flexible light emitting diodes", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041Y (16 February 2017); https://doi.org/10.1117/12.2251618

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