512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes

Russell J. Ricker; Sydney Provence; Lee M. Murray; Dennis T. Norton; Jonathon T. Olesberg; John P. Prineas; Thomas F. Boggess

doi:10.1117/12.2258468

16 February 2017 512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes

Russell J. Ricker, Sydney Provence, Lee M. Murray, Dennis T. Norton, Jonathon T. Olesberg, John P. Prineas, Thomas F. Boggess

Author Affiliations +

Proceedings Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI; 101241L (2017) https://doi.org/10.1117/12.2258468
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

InAs/GaSb superlattice light-emitting diodes are a promising technology for progressing the state-of-the art infrared scene projectors. By targeting a specific band of interest, they are able to achieve apparent temperatures greater than that of conventional resistor arrays and settling times on the order of nanoseconds. We report the fabrication of a dual-color infrared InAs/GaSb superlattice light-emitting diode array for operation in the mid-wave infrared. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual-color, cascaded InAs/GaSb superlattice light-emitting diodes were grown via molecular beam epitaxy on (100) GaSb substrates. At 77K, the emitted wavelengths are in the 3.2-4.2μm and 4.2-5.2μm range, with peak wavelengths at 3.81μm and 4.72μm. Using photolithography and wet etching, a 512×512 array of 48μm-pitch pixels were fabricated and hybridized to a silicon read-in integrated circuit. Test arrays with an 8×8 matrix of pixels demonstrated greater than 2 W/cm²˙sr for the 4.7μm emitter and greater than 5W/cm²˙sr for the 3.8μm emitter; the lower radiance in the long-wave emitter is due to a small active region volume left after fabrication. These respectively correspond to apparent temperatures greater than 1400K and 2000K in the 3-5μm band including fill factor.

Citation Download Citation

Russell J. Ricker, Sydney Provence, Lee M. Murray, Dennis T. Norton, Jonathon T. Olesberg, John P. Prineas, and Thomas F. Boggess "512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101241L (16 February 2017); https://doi.org/10.1117/12.2258468

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available