Laser and transistor material on Si substrate

Dzianis Saladukha; Tomasz J. Ochalski; Felipe Murphy Armando; Michael B. Clavel; Mantu K. Hudait

doi:10.1117/12.2252383

20 February 2017 Laser and transistor material on Si substrate

Dzianis Saladukha, Tomasz J. Ochalski, Felipe Murphy Armando, Michael B. Clavel, Mantu K. Hudait

Proceedings Volume 10108, Silicon Photonics XII; 101080E (2017) https://doi.org/10.1117/12.2252383
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this work we study Ge structures grown on silicon substrates. We use photoluminescence and photoreflectance to determine both direct and indirect gap of Ge under tensile strain. The strain is induced by growing the Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled by a 30 band k·p model based on first principles calculations. Characterization techniques show very good agreement with the calculated energy values.

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Dzianis Saladukha, Tomasz J. Ochalski, Felipe Murphy Armando, Michael B. Clavel, and Mantu K. Hudait "Laser and transistor material on Si substrate", Proc. SPIE 10108, Silicon Photonics XII, 101080E (20 February 2017); https://doi.org/10.1117/12.2252383

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