Optical study of strain-free GeSn nanowires

Dzianis Saladukha; Jessica Doherty; Subhajit Biswas; Tomasz J. Ochalski; Justin D. Holmes

doi:10.1117/12.2252628

20 February 2017 Optical study of strain-free GeSn nanowires

Dzianis Saladukha, Jessica Doherty, Subhajit Biswas, Tomasz J. Ochalski, Justin D. Holmes

Proceedings Volume 10108, Silicon Photonics XII; 101081C (2017) https://doi.org/10.1117/12.2252628
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Here we describe a uniform diameter, direct bandgap Ge_1-xSn_xalloy nanowires, with a Sn incorporation up to 9%, the fabricated through a conventional catalytic bottom-up growth paradigm employing innovative catalysts and precursors. Optical characterization by means of temperature dependent photoluminescence is used to identify transition point from indirect to direct badgap of GeSn nanowires.

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Citation Download Citation

Dzianis Saladukha, Jessica Doherty, Subhajit Biswas, Tomasz J. Ochalski, and Justin D. Holmes "Optical study of strain-free GeSn nanowires", Proc. SPIE 10108, Silicon Photonics XII, 101081C (20 February 2017); https://doi.org/10.1117/12.2252628

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