Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology

S. M. Sherif; M. Swillam

doi:10.1117/12.2251356

20 February 2017 Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology

S. M. Sherif, M. Swillam

Proceedings Volume 10112, Photonic and Phononic Properties of Engineered Nanostructures VII; 101120V (2017) https://doi.org/10.1117/12.2251356
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We introduce an ultra-compact plasmonic sensor for lab on chip applications. The device utilizes the heavily doped Si for introducing plasmonic effects. The use of heavily doped silicon instead of metals for plasmonic excitation has the advantage of reduced losses and CMOS compatibility. The proposed device has a simple structure, also it can be easily fabricated using the mature CMOS fabrication technology. The device structure is made of a heavily doped silicon layer, on a silicon dioxide substrate, while the silicon layer is etched to form a slot waveguide, and a rectangular cavity. The proposed plasmonic resonator is operational in the mid infrared spectral region. The sensor possesses a high sensitivity of 5000nm/RIU in the mid infrared range.

Conference Presentation

Citation Download Citation

S. M. Sherif and M. Swillam "Silicon-plasmonic-integrated mid-infrared sensor using CMOS technology", Proc. SPIE 10112, Photonic and Phononic Properties of Engineered Nanostructures VII, 101120V (20 February 2017); https://doi.org/10.1117/12.2251356

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