Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

Michael Bendayan; Roi Sabo; Roee Zolberg; Yaakov Mandelbaum; Avraham Chelly; Avi Karsenty

doi:10.1117/12.2252681

20 February 2017 Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

Michael Bendayan, Roi Sabo, Roee Zolberg, Yaakov Mandelbaum, Avraham Chelly, Avi Karsenty

Author Affiliations +

Proceedings Volume 10112, Photonic and Phononic Properties of Engineered Nanostructures VII; 101122A (2017) https://doi.org/10.1117/12.2252681
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Citation Download Citation

Michael Bendayan, Roi Sabo, Roee Zolberg, Yaakov Mandelbaum, Avraham Chelly, and Avi Karsenty "Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks", Proc. SPIE 10112, Photonic and Phononic Properties of Engineered Nanostructures VII, 101122A (20 February 2017); https://doi.org/10.1117/12.2252681

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