Light-emitting and photovoltaic devices based on quantum well-dots hybrid nanostructures

Alexey M. Nadtochiy; Mikhail V. Maximov; Sergey A. Mintairov; Nikolay A. Kalyuzhnyy; Yuri M. Shernyakov; Alexey S. Payusov; Alexey E. Zhukov; Sergei Rouvimov; Artem V. Savelyev

doi:10.1117/12.2249867

20 February 2017 Light-emitting and photovoltaic devices based on quantum well-dots hybrid nanostructures

Alexey M. Nadtochiy, Mikhail V. Maximov, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Yuri M. Shernyakov, Alexey S. Payusov, Alexey E. Zhukov, Sergei Rouvimov, Artem V. Savelyev

Author Affiliations +

Proceedings Volume 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV; 101140Y (2017) https://doi.org/10.1117/12.2249867
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We report on optoelectronic devices based on novel type of active region - quantum well-dots (QWD) hybrid nanostructures. This hybrid type of the active region can be described as a quantum well, which has an ultradense array of narrow-gap In-rich regions with the size of 20-30 nm, which serve as the localization centers of charge carriers. Such QWD structures can be formed spontaneously during the MOVPE (metalorganic vapor phase epitaxy) deposition of In_xGa_1-xAs (0.3<; x<0.5) on GaAs substrate. Optimal average thickness and composition of In_xGa_1-xAs to achieve maximal PL intensity and photocurrent in QWD structures are determined. Characteristics of edge-emitting lasers based on 5 QWD layers are described. Advantages of using QWD medium in light-emitting and photovoltaic devices are discussed.

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Alexey M. Nadtochiy, Mikhail V. Maximov, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Yuri M. Shernyakov, Alexey S. Payusov, Alexey E. Zhukov, Sergei Rouvimov, and Artem V. Savelyev "Light-emitting and photovoltaic devices based on quantum well-dots hybrid nanostructures", Proc. SPIE 10114, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, 101140Y (20 February 2017); https://doi.org/10.1117/12.2249867

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