Laser processing of VO2 thin films for THz devices and metamaterials

Nicholas A. Charipar; Kristin M. Charipar; Heungsoo Kim; Scott A. Mathews; Eric Breckenfeld; Raymond C. Y. Auyeung; Alberto Piqué

doi:10.1117/12.2256120

20 February 2017 Laser processing of VO₂ thin films for THz devices and metamaterials

Nicholas A. Charipar, Kristin M. Charipar, Heungsoo Kim, Scott A. Mathews, Eric Breckenfeld, Raymond C. Y. Auyeung, Alberto Piqué

Author Affiliations +

Proceedings Volume 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII; 1009102 (2017) https://doi.org/10.1117/12.2256120
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

Vanadium dioxide (VO₂) undergoes a metal-insulator transition (MIT) at 68°C, at which point its electrical conductivity changes by several orders of magnitude. This extremely fast transition (Δt < 100 fs) can be induced thermally, mechanically, electrically, or optically. The combination of fast switching times and response to a broad range of external stimuli make VO₂ an ideal material for a variety of novel devices and sensors. While the MIT in VO₂ has been exploited for a variety of microwave/terahertz applications (i.e. tunable filters and modulators), very few devices exploiting the fast switching time of VO₂ have been reported. The electrical properties of thin film VO₂ (conductivity, carrier concentration, switching speed, etc.) are highly dependent on growth and post-processing conditions. The optimization of these conditions is therefore critical to the design and fabrication of VO₂ devices. This paper will report the effects of various pulsed laser deposition (PLD) growth conditions on the metal-insulator transition in thin film VO₂. In particular, we report the effect of PLD growth conditions on the stress/strain state of the VO₂ layer, and the subsequent change in electrical properties. Finally, results from fabricated VO₂ devices (THz emitters and THz modulators) will be presented.

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Nicholas A. Charipar, Kristin M. Charipar, Heungsoo Kim, Scott A. Mathews, Eric Breckenfeld, Raymond C. Y. Auyeung, and Alberto Piqué "Laser processing of VO₂ thin films for THz devices and metamaterials", Proc. SPIE 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII, 1009102 (20 February 2017); https://doi.org/10.1117/12.2256120

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