Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition

Seungkuk Kuk; Jongmin Park; Tao Zhang; David J. Hwang

doi:10.1117/12.2251269

20 February 2017 Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition

Seungkuk Kuk, Jongmin Park, Tao Zhang, David J. Hwang

Proceedings Volume 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII; 1009105 (2017) https://doi.org/10.1117/12.2251269
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH₄/NH₃ gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.

Citation Download Citation

Seungkuk Kuk, Jongmin Park, Tao Zhang, and David J. Hwang "Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition", Proc. SPIE 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII, 1009105 (20 February 2017); https://doi.org/10.1117/12.2251269

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