InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

Kei May Lau; Bei Shi; Yating Wan; Alan Y. Liu; Qiang Li; Si Zhu; Arthur C. Gossard; John E. Bowers; Evelyn L. Hu

doi:10.1117/12.2256481

20 February 2017 InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths

Kei May Lau, Bei Shi, Yating Wan, Alan Y. Liu, Qiang Li, Si Zhu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu

Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101230J (2017) https://doi.org/10.1117/12.2256481
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Continuous-wave optically-pumped micro-disk lasers epitaxially grown on silicon with single mode lasing at communication wavelengths from liquid helium to room temperature is reported. Growth of the InAs quantum dots (QDs) gain medium was carried out on high crystalline quality GaAs/InP-on-silicon templates. Special defect filtering techniques have been employed to minimize the impact of the highly lattice-mismatched heteroepitaxial growth on (001) silicon substrates. Compared with quantum wells, the multi-stack InAs QDs are less sensitive to residual defects originated from the hetero-interfaces. Using QDs in a micro-disk resonant cavity with minimized non-radiative surface recombination leads to low-threshold lasing in the micro-disks with a few microns in diameter.

Citation Download Citation

Kei May Lau, Bei Shi, Yating Wan, Alan Y. Liu, Qiang Li, Si Zhu, Arthur C. Gossard, John E. Bowers, and Evelyn L. Hu "InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101230J (20 February 2017); https://doi.org/10.1117/12.2256481

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