Exciton Mott transition in GaAs studied by terahertz spectroscopy

Fumiya Sekiguchi; Changsu Kim; Hidefumi Akiyama; Ryo Shimano

doi:10.1117/12.2250735

23 February 2017 Exciton Mott transition in GaAs studied by terahertz spectroscopy

Fumiya Sekiguchi, Changsu Kim, Hidefumi Akiyama, Ryo Shimano

Proceedings Volume 10102, Ultrafast Phenomena and Nanophotonics XXI; 101020T (2017) https://doi.org/10.1117/12.2250735
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We performed optical pump-THz probe spectroscopy on bulk GaAs to investigate the nature of exciton Mott transition. The behavior of excitonic correlation in the proximity of the Mott transition density is elucidated through the resonant excitation of 1s excitons with using a nonlinear terahertz spectroscopy technique. We discuss the anomalous charge carrier dynamics of the metallic phase on the verge of Mott transition that appears only at low temperatures.

Citation Download Citation

Fumiya Sekiguchi, Changsu Kim, Hidefumi Akiyama, and Ryo Shimano "Exciton Mott transition in GaAs studied by terahertz spectroscopy", Proc. SPIE 10102, Ultrafast Phenomena and Nanophotonics XXI, 101020T (23 February 2017); https://doi.org/10.1117/12.2250735

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