Zn-vacancy related defects in ZnO grown by pulsed laser deposition

F. C. C. Ling; C. Q. Luo; Z. L. Wang; W. Anwand; A. Wagner

doi:10.1117/12.2267186

24 February 2017 Zn-vacancy related defects in ZnO grown by pulsed laser deposition

F. C. C. Ling, C. Q. Luo, Z. L. Wang, W. Anwand, A. Wagner

Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101050F (2017) https://doi.org/10.1117/12.2267186
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O₂)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 ^oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O₂)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=10²⁰ cm^-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.

Citation Download Citation

F. C. C. Ling, C. Q. Luo, Z. L. Wang, W. Anwand, and A. Wagner "Zn-vacancy related defects in ZnO grown by pulsed laser deposition", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050F (24 February 2017); https://doi.org/10.1117/12.2267186

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