Presentation + Paper
24 February 2017 Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells
Author Affiliations +
Abstract
Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zacharie Jehl, Daniel Suchet, Anatole Julian, Cyril Bernard, Naoya Miyashita, Francois Gibelli, Yoshitaka Okada, and Jean-Francois Guillemolles "Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells", Proc. SPIE 10099, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI, 100990N (24 February 2017); https://doi.org/10.1117/12.2250473
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Resistance

Solar energy

Solar cells

Heterojunctions

Temperature metrology

Gallium

Diodes

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