Paper
28 February 2017 Research on transmission high sensitivity GaAs cathode of low light level image devices
Ke Xu, Kunye Han, Jiangtao Xu
Author Affiliations +
Proceedings Volume 10256, Second International Conference on Photonics and Optical Engineering; 102563H (2017) https://doi.org/10.1117/12.2257817
Event: Second International Conference on Photonics and Optical Engineering, 2016, Xi'an, China
Abstract
To strive for the goal of further improving the overall performance of low-light-level Gen.Ⅲ image intensifier tube, modifications and innovations in the making of GaAs photocathode are already underway revolving around the basis of existing research, through which the sensitivity of GaAs photocathode is considerably improved from 1200μA/lm to above 1800μA/lm, 2000μA/lm (typical value), and it won’t drop within the 1000hrs’ storage inside the station according to the experiment on the photoemission stability of high-sensitivity GaAs photocathode. In short, highly distinguished characteristics of high sensitivity GaAs photocathode like wide response range, superior quantum efficiency and 1.06μm infrared response wavelength, promise its remarkable significance in both the enhancement of the overall performance and the prolongation of the operational life-span of low-lightlevel Gen.Ⅲ image intensifier tube.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ke Xu, Kunye Han, and Jiangtao Xu "Research on transmission high sensitivity GaAs cathode of low light level image devices", Proc. SPIE 10256, Second International Conference on Photonics and Optical Engineering, 102563H (28 February 2017); https://doi.org/10.1117/12.2257817
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KEYWORDS
Gallium arsenide

Image intensifiers

Image transmission

Infrared imaging

Infrared radiation

Quantum efficiency

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