Paper
21 March 2017 Plasma-assisted thermal atomic layer etching of Al2O3
Andreas Fischer, Richard Janek, John Boniface, Thorsten Lill, K. J. Kanarik, Yang Pan, Vahid Vahedi, Richard A. Gottscho
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Abstract
In this paper, we report on plasma assisted thermal Atomic Layer Etching (ALE) of Al2O3. The surface was modified via a fluorine containing plasma without bias power. The removal was accomplished by a thermal reaction step using tin-(II) acetylacetonate Sn(acac)2. After a few cycles, material removal stopped and growth of a Sn-containing layer was observed. Insertion of a hydrogen plasma step was found to remove the Sn layer and a continuous material removal of 0.5 Å/cycle was measured. The results show that plasma assistance can be used to realize thermal ALE of Al2O3. Specifically, plasma can be used both in the fluorination step and to keep the surface free from contaminations.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Fischer, Richard Janek, John Boniface, Thorsten Lill, K. J. Kanarik, Yang Pan, Vahid Vahedi, and Richard A. Gottscho "Plasma-assisted thermal atomic layer etching of Al2O3", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490H (21 March 2017); https://doi.org/10.1117/12.2258129
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Plasma

Tin

Aluminum

Focus stacking software

Etching

Fluorine

Plasma treatment

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