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Proceedings Article

Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner

[+] Author Affiliations
Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last

ASML Netherlands B.V. (Netherlands)

Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430D (March 24, 2017); doi:10.1117/12.2258025
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From Conference Volume 10143

  • Extreme Ultraviolet (EUV) Lithography VIII
  • Eric M. Panning; Kenneth A. Goldberg
  • San Jose, California, United States | February 26, 2017
Abstract
References

abstract

With the introduction of its fifth-generation EUV scanner, the NXE:3400B, ASML has brought EUV to High-Volume Manufacturing for sub-10nm node lithography. This paper presents lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour (or wph).

Advances in source power have enabled a further increase of tool productivity requiring an associated increase of stage scan speeds. To maximize the number of yielding die per day a stringent Overlay, Focus, and Critical Dimension (CD) control is required. Tight CD control at improved resolution is obtained through a number of innovations: the NXE:3400B features lower aberration levels and a revolutionary new illumination system, offering improved pupil-fill ratio and larger sigma range. Overlay and Focus are further improved by implementation of a new wafer clamp and improved scanner controls.

The NXE:3400B also offers full support for reticle pellicles. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Mark van de Kerkhof ; Hans Jasper ; Leon Levasier ; Rudy Peeters ; Roderik van Es, et al.
" Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner ", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430D (March 24, 2017); doi:10.1117/12.2258025; http://dx.doi.org/10.1117/12.2258025


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