First light at EBL2

Norbert Koster; Edwin te Sligte; Freek Molkenboer; Alex Deutz; Peter van der Walle; Pim Muilwijk; Wouter Mulckhuyse; Bastiaan Oostdijck; Christiaan Hollemans; Björn Nijland; Peter Kerkhof; Michel van Putten; Jeroen Westerhout

doi:10.1117/12.2257997

24 March 2017 First light at EBL2

Norbert Koster, Edwin te Sligte, Freek Molkenboer, Alex Deutz, Peter van der Walle, Pim Muilwijk, Wouter Mulckhuyse, Bastiaan Oostdijck, Christiaan Hollemans, Björn Nijland, Peter Kerkhof, Michel van Putten, Jeroen Westerhout

Author Affiliations +

Proceedings Volume 10143, Extreme Ultraviolet (EUV) Lithography VIII; 101431N (2017) https://doi.org/10.1117/12.2257997
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS system. This paper describes the integration process and first light of the EUV source.EBL2 accepts a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility to facilitate wafer printing on scanners after exposure in EBL2. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source from Ushio. EUV intensity, spectrum, and repetition rate are all adjustable. The XPS system is now operational and accepts samples up to reticle size.

Citation Download Citation

Norbert Koster, Edwin te Sligte, Freek Molkenboer, Alex Deutz, Peter van der Walle, Pim Muilwijk, Wouter Mulckhuyse, Bastiaan Oostdijck, Christiaan Hollemans, Björn Nijland, Peter Kerkhof, Michel van Putten, and Jeroen Westerhout "First light at EBL2", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431N (24 March 2017); https://doi.org/10.1117/12.2257997

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