High-NA metrology and sensing on Berkeley MET5

Ryan Miyakawa; Chris Anderson; Patrick Naulleau

doi:10.1117/12.2261893

27 March 2017 High-NA metrology and sensing on Berkeley MET5

Ryan Miyakawa, Chris Anderson, Patrick Naulleau

Proceedings Volume 10143, Extreme Ultraviolet (EUV) Lithography VIII; 101430N (2017) https://doi.org/10.1117/12.2261893
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

In this paper we compare two non-interferometric wavefront sensors suitable for in-situ high-NA EUV optical testing. The first is the AIS sensor, which has been deployed in both inspection and exposure tools. AIS is a compact, optical test that directly measures a wavefront by probing various parts of the imaging optic pupil and measuring localized wavefront curvature. The second is an image-based technique that uses an iterative algorithm based on simulated annealing to reconstruct a wavefront based on matching aerial images through focus. In this technique, customized illumination is used to probe the pupil at specific points to optimize differences in aberration signatures.

Conference Presentation

Citation Download Citation

Ryan Miyakawa, Chris Anderson, and Patrick Naulleau "High-NA metrology and sensing on Berkeley MET5", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430N (27 March 2017); https://doi.org/10.1117/12.2261893

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available