Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask

Jihoon Na; Donggun Lee; Changhwan Do; Hong-seok Sim; Jung-Hwan Lee; Jungyoup Kim; Hwan-Seok Seo; Heebom Kim; Chan Uk Jeon

doi:10.1117/12.2257390

28 March 2017 Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask

Jihoon Na, Donggun Lee, Changhwan Do, Hong-seok Sim, Jung-Hwan Lee, Jungyoup Kim, Hwan-Seok Seo, Heebom Kim, Chan Uk Jeon

Author Affiliations +

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101450M (2017) https://doi.org/10.1117/12.2257390
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

We introduce an extreme ultraviolet lithography (EUVL) mask defect review system (EMDRS) which has been developing in SAMUSNG. It applies a stand-alone high harmonic generation (HHG) EUV source as well as simple EUV optics consisting of a folding mirror and a zoneplate. The EMDRS has been continuously updated and utilized for various applications regarding defect printability in EUVL. One of the main roles of the EMDRS is to verify either mask repair or mask defect avoidance (MDA) by actinic reviews of defect images before and after the process. Using the MDA, small phase defects could be hidden below absorber patterns, but it is very challenging in case of layouts with high density patterns. The EMDRS clearly verify the success of the MDA while conventional SEM could not detect the images. In addition, we emulate images of the sub-resolution assist features (SRAFs) by the EMDRS and compared them with the wafer exposure results.

Conference Presentation

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Jihoon Na, Donggun Lee, Changhwan Do, Hong-seok Sim, Jung-Hwan Lee, Jungyoup Kim, Hwan-Seok Seo, Heebom Kim, and Chan Uk Jeon "Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450M (28 March 2017); https://doi.org/10.1117/12.2257390

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