Presentation + Paper
28 March 2017 CD-SEM distortion quantification for EPE metrology and contour analysis
Author Affiliations +
Abstract
Given the potential impact of distortions within the Field Of View (FOV) of the SEM, we need a method to quantify and describe them. We will show a method to find the magnitude and directions of the distortions. This description will enable assessment of impact on local distance measurements like edge placement errors (EPE) analysis and contour measurements. Knowing the distortions with sufficient resolution and stability can also enable corrections for this phenomenon. We will show that applying this correction in post processing, we can bring back the absolute measurement error from 1.5 nm to 0.3 nm.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harm Dillen, Ton Kiers, Sandip Halder, Thomas I. Wallow, and Frieda van Roey "CD-SEM distortion quantification for EPE metrology and contour analysis", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014515 (28 March 2017); https://doi.org/10.1117/12.2260664
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CITATIONS
Cited by 1 patent.
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KEYWORDS
Distortion

Data modeling

Semiconducting wafers

Distance measurement

Scanning electron microscopy

Metrology

Calibration

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