Presentation + Paper
28 March 2017 High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node
J. T. Neumann, T. Garbowski, W. Högele, T. Korb, S. Halder, P. Leray, R. Garreis, M. le Maire, D. Zeidler
Author Affiliations +
Abstract
We use the ZEISS MultiSEM to inspect patterns on separated chips of a semiconductor wafer suited for process window characterization at imec-N10 logic node. We systematically analyze the impact of imaging parameters of the MultiSEM on quantitative metrics extracted from the images, e.g., CD repeatability and relative defect capture, and demonstrate that the MultiSEM is able to image the wafer patterns, track their variations through the process conditions of the lithography scanner, and consistently find patterning defects limiting the lithographic process window.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. T. Neumann, T. Garbowski, W. Högele, T. Korb, S. Halder, P. Leray, R. Garreis, M. le Maire, and D. Zeidler "High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451S (28 March 2017); https://doi.org/10.1117/12.2257980
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Lithography

Optical lithography

Critical dimension metrology

Inspection

Sensors

Image quality

Scanning electron microscopy

Back to Top