New alignment mark design structures for higher diffraction order wafer quality enhancement

Libin Zhang; Yaobin Feng; Lisong Dong; Xiaojing Su; Zhengguo Tian; Chao Fang; Yayi Wei; Tianchun Ye

doi:10.1117/12.2257627

28 March 2017 New alignment mark design structures for higher diffraction order wafer quality enhancement

Libin Zhang, Yaobin Feng, Lisong Dong, Xiaojing Su, Zhengguo Tian, Chao Fang, Yayi Wei, Tianchun Ye

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101452C (2017) https://doi.org/10.1117/12.2257627
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

ASML AH53 and AH74 with higher odd-order diffraction light are the widely used alignment marks in industry to achieve better alignment accuracy by reducing mark damage noise. During lithography alignment process, decent diffraction light power is the basic demand. However, with the use of some high absorption (k is not equal to 0 for detective wavelength) material, it is difficult to detect the light power reflecting from the thick and opaque film stacks with these standard alignment marks. Here we optimized four alignment marks with higher odd-order diffraction power with comparing with AH53 and AH74. One software based on Fourier optical theory is built to quickly calculate the wafer quality (WQ) of different film stacks and different alignment marks. ASML SMASH alignment system can accept customized alignment mark, with new mark type configuration file. In order to demonstrate the effectiveness of new alignment marks, we put the marks on a mask and do the experiments to compare with simulation results. All the experiments results show that new designed alignment marks have larger WQs of odd-order diffraction.

Citation Download Citation

Libin Zhang, Yaobin Feng, Lisong Dong, Xiaojing Su, Zhengguo Tian, Chao Fang, Yayi Wei, and Tianchun Ye "New alignment mark design structures for higher diffraction order wafer quality enhancement", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101452C (28 March 2017); https://doi.org/10.1117/12.2257627

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