High throughput and dense sampling metrology for process control

Lei Sun; Tsunehito Kohyama; Kuniaki Takeda; Hiroto Nozawa; Yuji Asakawa; Taher Kagalwala; Granger Lobb; Frank Mont; Xintuo Dai; Shyam Pal; Wenhui Wang; Jongwook Kye; Francis Goodwin

doi:10.1117/12.2258623

28 March 2017 High throughput and dense sampling metrology for process control

Lei Sun, Tsunehito Kohyama, Kuniaki Takeda, Hiroto Nozawa, Yuji Asakawa, Taher Kagalwala, Granger Lobb, Frank Mont, Xintuo Dai, Shyam Pal, Wenhui Wang, Jongwook Kye, Francis Goodwin

Author Affiliations +

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101452D (2017) https://doi.org/10.1117/12.2258623
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Optical metrology tool, LX530, is designed for high throughput and dense sampling metrology in semiconductor manufacture. It can inspect the dose and focus variation in the process control based on the critical dimension (CD) and line edge roughness (LER) measurement. The working principle is shown with a finite-difference-time-domain (FDTD) CD simulation. Two optical post lithography wafers, including one focus-exposure-matrix (FEM) wafer and one nominal wafer, are inspected for CD, dose and focus analysis. It is demonstrated that dose and focus can be measured independently. A data output method based on global CD uniformity (CDU), inter CDU and intra CDU is proposed to avoid the data volume issue in dense sampling whole wafer inspection.

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Lei Sun, Tsunehito Kohyama, Kuniaki Takeda, Hiroto Nozawa, Yuji Asakawa, Taher Kagalwala, Granger Lobb, Frank Mont, Xintuo Dai, Shyam Pal, Wenhui Wang, Jongwook Kye, and Francis Goodwin "High throughput and dense sampling metrology for process control", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101452D (28 March 2017); https://doi.org/10.1117/12.2258623

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