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Proceedings Article

Advanced development techniques for metal-based EUV resists

[+] Author Affiliations
Jodi Hotalen, Michael Murphy, William Earley, Robert L. Brainard

SUNY Polytechnic Institute (United States)

Michaela Vockenhuber, Yasin Ekinci

Paul Scherrer Institut (Switzerland)

Daniel A. Freedman

State Univ. of New York at New Paltz (United States)

Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014309 (March 31, 2017); doi:10.1117/12.2258126
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From Conference Volume 10143

  • Extreme Ultraviolet (EUV) Lithography VIII
  • Eric M. Panning; Kenneth A. Goldberg
  • San Jose, California, United States | February 26, 2017

abstract

Pure thin-films of unimolecular organometallic photoresists were lithographically evaluated using extreme ultraviolet light (EUV, λ = 13.5 nm) and developed using solutions containing carboxylic acids. Optimization of development solutions used with a cobalt-oxalate EUV resist (NP1, 2) led to a switch in lithographic tone from negative to positive. Additional optimization led to an improvement in top loss (35 to 7%) with development in cyclohexanone and 2-butanone, respectively. We saw a drastic improvement in photo-speed (Emax = 5 mJ/cm2) and contrast of the negative-tone imaging with development in certain acidic solutions. Additionally, carboxylic acid solutions provide excellent development conditions for resists that we, in the past, have been unable to successfully develop. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Jodi Hotalen ; Michael Murphy ; William Earley ; Michaela Vockenhuber ; Yasin Ekinci, et al.
" Advanced development techniques for metal-based EUV resists ", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014309 (March 31, 2017); doi:10.1117/12.2258126; http://dx.doi.org/10.1117/12.2258126


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