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Proceedings Article

Antimony photoresists for EUV lithography: mechanistic studies

[+] Author Affiliations
Michael Murphy, Amrit Narasimhan, Steven Grzeskowiak, Jacob Sitterly, Philip Schuler, Jeff Richards, Greg Denbeaux, Robert L. Brainard

SUNY Polytechnic Institute (United States)

Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014307 (March 31, 2017); doi:10.1117/12.2258119
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From Conference Volume 10143

  • Extreme Ultraviolet (EUV) Lithography VIII
  • Eric M. Panning; Kenneth A. Goldberg
  • San Jose, California, United States | February 26, 2017

abstract

We have developed a method to study the photomechanism of our antimony carboxylate platform R3Sb(COOR')2. A series of mechanistic studies followed the production of reaction byproducts by mass spectrometer, as they left the film during exposure to EUV photons and 80 eV electrons. We identified several prominent outgassing fragments and their rates of production as a function of ligand structure. The degree of outgassing appears to be well-correlated with the bond dissociation energy of the carboxylate ligand R’ group. Furthermore, a deuterium labeling study was conducted to determine from which ligand hydrogen is abstracted to form benzene and phenol during exposure. Benzene and phenol were found to abstract hydrogen from opposing sites within the film, and with greater than 95% isotopic purity. Using the results of the outgassing studies alongside established mechanisms for electron-induced reactions; a series of reaction pathways were proposed to generate the aforementioned outgassing species and a possible nonvolatile negative-tone photoproduct. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Michael Murphy ; Amrit Narasimhan ; Steven Grzeskowiak ; Jacob Sitterly ; Philip Schuler, et al.
" Antimony photoresists for EUV lithography: mechanistic studies ", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014307 (March 31, 2017); doi:10.1117/12.2258119; http://dx.doi.org/10.1117/12.2258119


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