Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography

William Earley; Deanna Soucie; Kenji Hosoi; Arata Takahashi; Takashi Aoki; Brian Cardineau; Koichi Miyauchi; Jay Chun; Michael O'Sullivan; Robert Brainard

doi:10.1117/12.2258324

18 April 2017 Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography

William Earley, Deanna Soucie, Kenji Hosoi, Arata Takahashi, Takashi Aoki, Brian Cardineau, Koichi Miyauchi, Jay Chun, Michael O'Sullivan, Robert Brainard

Author Affiliations +

Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101460H (2017) https://doi.org/10.1117/12.2258324
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction can be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.

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Citation Download Citation

William Earley, Deanna Soucie, Kenji Hosoi, Arata Takahashi, Takashi Aoki, Brian Cardineau, Koichi Miyauchi, Jay Chun, Michael O'Sullivan, and Robert Brainard "Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460H (18 April 2017); https://doi.org/10.1117/12.2258324

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