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19 April 2017 Nonlinear excitation of single quantum emitters in hexagonal boron nitride (Conference Presentation)
Andreas W. Schell, Trong Toan Tran, Igor Aharonovich, Hideaki Takashima, Shigeki Takeuchi
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Proceedings Volume 10102, Ultrafast Phenomena and Nanophotonics XXI; 1010214 (2017) https://doi.org/10.1117/12.2251262
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Recently, two-dimensional materials have gained much interest for various applications in nanophotonics and quantum optics, as they possess a strong luminescence and are able to host single quantum emitters. Excitation of quantum emitters via a two-photon process can be employed for high resolution imaging and has applications in quantum optics. Here, we present one- and two-photon excitation of single defects in hexagonal boron nitride (hBN) and analyse the properties of the emitted light [1]. We find clear antibunching signals that prove the single emitter character in both excitation cases. To gain further knowledge, we also obtain saturation curves. From a comparison of one- and two-photon case insights about the level structure of the defects can be obtained. These results will not only help the fundamental understanding of defects in hBN, but also help to introduce this class of emitters in optical imaging, as the defects in hBN are of small spatial extend, photostable and emit their fluorescence well in the wavelength region of the biological optical window. [1] A. W. Schell et al. arXiv:1606.09364 (2016)
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Andreas W. Schell, Trong Toan Tran, Igor Aharonovich, Hideaki Takashima, and Shigeki Takeuchi "Nonlinear excitation of single quantum emitters in hexagonal boron nitride (Conference Presentation)", Proc. SPIE 10102, Ultrafast Phenomena and Nanophotonics XXI, 1010214 (19 April 2017); https://doi.org/10.1117/12.2251262
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KEYWORDS
Boron
Luminescence
Quantum optics
Nanophotonics
Image resolution
Optical imaging
Current controlled current source
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