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20 April 2017 Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation)
Andrew M. Armstrong, Mary H. Crawford, Daniel D. Koleske, Erik C. Nelson, Isaac Wildeson, Parijat Deb
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Proceedings Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI; 101240W (2017) https://doi.org/10.1117/12.2252683
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Efficiency droop and the green gap are challenges to InGaN/GaN light emitting diodes (LEDs). Defects have been suggested to contribute to both effects, so understanding the origin of defects and their impact on LED performance is important to improving efficiency. This talk describes the use of deep level optical spectroscopy (DLOS) to characterize deep level defects in quantum well (QW) and quantum barrier (QB) regions of InGaN LEDs. The spatial dependence of deep level defect density in the MQW region and the evolution of QW deep level defects with indium alloying will be discussed.
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Andrew M. Armstrong, Mary H. Crawford, Daniel D. Koleske, Erik C. Nelson, Isaac Wildeson, and Parijat Deb "Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation)", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240W (20 April 2017); https://doi.org/10.1117/12.2252683
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KEYWORDS
Light emitting diodes
Quantum wells
Indium gallium nitride
Indium
Optical spectroscopy
Current controlled current source
Solid state lighting
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