Crack suppression of SiO2 thin film formed by 157 nm F2 laser induced photochemical surface modification of hard silicone coating film on polycarbonate (Conference Presentation)

Hidetoshi Nojiri; Masayuki Okoshi

doi:10.1117/12.2250124

21 April 2017 Crack suppression of SiO₂ thin film formed by 157 nm F₂ laser induced photochemical surface modification of hard silicone coating film on polycarbonate(Conference Presentation)

Hidetoshi Nojiri, Masayuki Okoshi

Author Affiliations +

Proceedings Volume 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII; 1009107 (2017) https://doi.org/10.1117/12.2250124
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

Light-weighting of vehicle is now strongly required for reducing gasoline consumption and CO₂ emission. In this study, F2 laser was irradiated to the surface of hard silicone resin, coated by dip coating method onto the film of acrylic resin on a polycarbonate substrate. The surface part of the silicone resin was photo-chemically modified into SiO₂. One of two types of aperture mask, 3×3 mm² and 50×50 μm², was set on the sample surface. The single pulse fluence was varied from 4 to 14 mJ/cm², pulse repetition frequency was set to 10 Hz, and irradiation time was changed from 30 to 120 s. N₂ gas was induced around the surface of the sample. After modification, SiO₂ modified layer was etched by HF 1% diluted solution, and the etched depth was measured by a stylus-type surface profilometer. As a result of experiments, stress in the SiO₂ modified layer increased by increasing of F2 laser irradiation time. In case of using aperture mask of 3×3 mm², cracks were generated only on the irradiated area for longer irradiation time than 60 s. It is considered that the tensile stress in the modified layer exceeded the tensile fracture strength of 48 MPa of typical SiO₂. When a mesh mask of 50×50 μm² aperture was used, no crack generated even for a long irradiation of 200 s. We found, the tensile stress in SiO₂ modified film can be reduced remarkably with using smaller aperture size of mesh mask, and it is very effective to prevent cracking.

Conference Presentation

Citation Download Citation

Hidetoshi Nojiri and Masayuki Okoshi "Crack suppression of SiO₂ thin film formed by 157 nm F₂ laser induced photochemical surface modification of hard silicone coating film on polycarbonate(Conference Presentation)", Proc. SPIE 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII, 1009107 (21 April 2017); https://doi.org/10.1117/12.2250124

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KEYWORDS

Silica

Silicon

Coating

Semiconductor lasers

Silicon films

Thin film coatings

Thin films

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