Analysis of multilayer black phosphorus for photodetector applications

Gustavo A. Saenz; Dalal Fadil; Anupama B. Kaul

doi:10.1117/12.2262854

28 April 2017 Analysis of multilayer black phosphorus for photodetector applications

Gustavo A. Saenz, Dalal Fadil, Anupama B. Kaul

Proceedings Volume 10209, Image Sensing Technologies: Materials, Devices, Systems, and Applications IV; 1020912 (2017) https://doi.org/10.1117/12.2262854
Event: SPIE Commercial + Scientific Sensing and Imaging, 2017, Anaheim, CA, United States

Abstract

Two-dimensional black phosphorous (BP) is a novel material with great potential for implementation in a new generation of flexible and optoelectronics devices. 2D BP, an intrinsically p-type semiconductor with high hole mobility, has a hexagonal honeycomb structure with strong anisotropic properties, including mechanical, thermal, electrical, and optical properties, along the zigzag against the armchair direction. In contrast with other semiconductor layered materials, such as Transition Metal Dichalcogenides (TMDs), the band gap in black phosphorous remains direct both in bulk as in monolayer. Also, as the number of layers is reduced the band gap is open up from ~ 0.3 eV in bulk to ~ 2 eV or more in monolayer, opposite effect in TMDs. BP exhibits a fast photoresponse, it can be operated in near infrared spectrum, and the photodetection can be tunable with an external electric field. In this work, we have mechanically exfoliated multilayer black phosphorus. We have conducted a stability and degradation study of the exfoliated membranes when exposed they are exposed to air and high temperatures up to 400 °C. In addition, a two-terminal broadband photodetector has been designed and fabricated based on multilayer black phosphorus. The optoelectrical measurements exhibit relatively high electrical transport levels (~ 100 uA at 1 V) compared to previous reports. The photoresponse of our device is analyzed here where the photocurrent was measured as a function of the source-drain bias voltages.

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Gustavo A. Saenz, Dalal Fadil, and Anupama B. Kaul "Analysis of multilayer black phosphorus for photodetector applications", Proc. SPIE 10209, Image Sensing Technologies: Materials, Devices, Systems, and Applications IV, 1020912 (28 April 2017); https://doi.org/10.1117/12.2262854

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KEYWORDS

Phosphorus

Photodetectors

Semiconductors

Silicon

P-type semiconductors

Raman spectroscopy

Crystals

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