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28 April 2017 Advanced slow-light modulators (Conference Presentation)
Toshihiko Baba
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Proceedings Volume 10119, Slow Light, Fast Light, and Opto-Atomic Precision Metrology X; 101191M (2017) https://doi.org/10.1117/12.2261140
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Slow light in photonic crystal waveguides allows the phase shifters in Si MZ modulators to enhance the modulator efficiency. In this study, the group index and bandwidth product is maximized, the mode penetration into photonic crystal claddings and electrical series resistance are balanced, and the p-n junction profile is optimized. The device is fabricated on 200 mm wafer using KrF exposure, and practical performance (bitrates up to 32 Gbps, 3 dB extinction ratio, 1.75 V PPG voltage, <0.2 pJ/bit energy consumption, 20 nm bandwidth, 5 dB passive loss, 1 dB modulation loss) is obtained in a 200-micron device. WDM, QPSK, PAM and sub-bandgap PD operations are also demonstrated.
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Toshihiko Baba "Advanced slow-light modulators (Conference Presentation)", Proc. SPIE 10119, Slow Light, Fast Light, and Opto-Atomic Precision Metrology X, 101191M (28 April 2017); https://doi.org/10.1117/12.2261140
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KEYWORDS
Modulators
Photonic crystals
Slow light
Cladding
Modulation
Phase shifts
Resistance
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