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Proceedings Article

A low-power CMOS readout IC design for bolometer applications

[+] Author Affiliations
Arman Galioglu, Shahbaz Abbasi, Atia Shafique, Ömer Ceylan, Melik Yazici, Emre C. Durmaz, Elif Gul Arsoy, Yasar Gurbuz

Sabanci Univ. (Turkey)

Mehmet Kaynak

IHP GmbH (Germany)

Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771U (February 22, 2017); doi:10.1117/12.2262459
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From Conference Volume 10177

  • Infrared Technology and Applications XLIII
  • Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John L. Miller; Paul R. Norton
  • Anaheim, California, United States | April 09, 2017

abstract

A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (≥ 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process. © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Arman Galioglu ; Shahbaz Abbasi ; Atia Shafique ; Ömer Ceylan ; Melik Yazici, et al.
" A low-power CMOS readout IC design for bolometer applications ", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771U (February 22, 2017); doi:10.1117/12.2262459; http://dx.doi.org/10.1117/12.2262459


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