PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Single-event effects (SEEs) refer to phenomena that arise from the interaction of single energetic particles with microelectronic devices, as is experienced in harsh radiation environments. Carrier generation induced by two-photon absorption (TPA) has become a valuable tool for SEE investigations of microelectronic structures owing to its unique ability to inject carriers through the wafer, directly into well-defined locations in complex circuits. Recent effort has focused on putting the TPA SEE technique on a more quantitative basis. This paper addresses the recent successes in achieving this goal, as well as the challenges that are faced moving forward.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Dale McMorrow, Joel M. Hales, Ani Khachatrian, Stephen P. Buchner, Jeffrey H. Warner, "Radiation effects testing via semiconductor nonlinear optics: successes and challenges," Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 1019307 (8 May 2017); https://doi.org/10.1117/12.2262841