Optical emission of silicon plasma induced by femtosecond double-pulse laser

Anmin Chen; Xiaowei Wang; Dan Zhang; Ying Wang; Suyu Li; Yuanfei Jiang; Mingxing Jin

doi:10.1117/12.2267969

12 May 2017 Optical emission of silicon plasma induced by femtosecond double-pulse laser

Anmin Chen, Xiaowei Wang, Dan Zhang, Ying Wang, Suyu Li, Yuanfei Jiang, Mingxing Jin

Proceedings Volume 10173, Fourth International Symposium on Laser Interaction with Matter; 101730X (2017) https://doi.org/10.1117/12.2267969
Event: 4th International Symposium on Laser Interaction with Matter, 2016, Chengdu, China

Abstract

In this paper, we present a study on the influence of interpulse delay in laser-induced silicon plasma with femtosecond double-pulse, and two subpulses have different laser energies. The meansured optical emission line collected by a lens is the Si (I) at 390.55 nm. The range of double-pulse interpulse delay is from -150 ps to 150 ps. Unlike the femtosecond double pulses with two same energies, the combination of low + high energies can enhance the spectral emission intensity, while the combination of high + low energies probably reduces the spectral line intensity compared with single-pulse femtosecond laser. The results indicate that the interpulse delay is very important for laser-induced breakdown spectroscopy with femtosecond double-pulse to improve the optical emission intensity.

Citation Download Citation

Anmin Chen, Xiaowei Wang, Dan Zhang, Ying Wang, Suyu Li, Yuanfei Jiang, and Mingxing Jin "Optical emission of silicon plasma induced by femtosecond double-pulse laser", Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730X (12 May 2017); https://doi.org/10.1117/12.2267969

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