Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

X. Du; G. R. Savich; B. T. Marozas; G. W. Wicks

doi:10.1117/12.2262928

16 May 2017 Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

X. Du, G. R. Savich, B. T. Marozas, G. W. Wicks

Author Affiliations +

Proceedings Volume 10177, Infrared Technology and Applications XLIII; 101771Q (2017) https://doi.org/10.1117/12.2262928
Event: SPIE Defense + Security, 2017, Anaheim, CA, United States

Abstract

The conventional processing of the III-V nBn photodetectors defines mesa devices by etching the contact n-layer and stopping immediately above the barrier, i.e., a shallow etch. This processing enables great suppression of surface leakage currents without having to explore surface passivation techniques. However, devices that are made with this processing scheme are subject to lateral diffusion currents. To address the lateral diffusion current, we compare the effects of different processing approaches and epitaxial structures of nBn detectors. The conventional solution for eliminating lateral diffusion current, a deep etch through the barrier and the absorber, creates increased dark currents and an increased device failure rate. To avoid deep etch processing, a new device structure is proposed, the inverted-nBn structure. By comparing with the conventional nBn structure, the results show that the lateral diffusion current is effectively eliminated in the inverted-nBn structure without elevating the dark currents.

Conference Presentation

Citation Download Citation

X. Du, G. R. Savich, B. T. Marozas, and G. W. Wicks "Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771Q (16 May 2017); https://doi.org/10.1117/12.2262928

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