Silicon-germanium and platinum silicide nanostructures for silicon based photonics

M. S. Storozhevykh; V. P. Dubkov; L. V. Arapkina; K. V. Chizh; S. A. Mironov; V. A. Chapnin; V. A. Yuryev

doi:10.1117/12.2265882

30 May 2017 Silicon-germanium and platinum silicide nanostructures for silicon based photonics

M. S. Storozhevykh, V. P. Dubkov, L. V. Arapkina, K. V. Chizh, S. A. Mironov, V. A. Chapnin, V. A. Yuryev

Proceedings Volume 10248, Nanotechnology VIII; 102480O (2017) https://doi.org/10.1117/12.2265882
Event: SPIE Microtechnologies, 2017, Barcelona, Spain

Abstract

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (T_gr < 600°C) forms on the wetting layer. Long-term annealing of granular films at the same conditions results in formation of c(4x2)-reconstructed wetting layer typical to high-temperature MBE (T_gr < 600°C) and huge clusters of Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt₃Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt₃Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si₃N₄ substrates at low temperatures.

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M. S. Storozhevykh, V. P. Dubkov, L. V. Arapkina, K. V. Chizh, S. A. Mironov, V. A. Chapnin, and V. A. Yuryev "Silicon-germanium and platinum silicide nanostructures for silicon based photonics", Proc. SPIE 10248, Nanotechnology VIII, 102480O (30 May 2017); https://doi.org/10.1117/12.2265882

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