Thermophysical properties of optical silicon

William A. Goodman

doi:10.1117/12.279815

28 July 1997 Thermophysical properties of optical silicon

William A. Goodman

Proceedings Volume 10289, Advanced Materials for Optics and Precision Structures: A Critical Review; 1028905 (1997) https://doi.org/10.1117/12.279815
Event: Optical Science, Engineering and Instrumentation '97, 1997, San Diego, CA, United States

Abstract

This paper presents an experimental database of the optical, electrical, physical, and structural properties for as-grown samples from large diameter silicon boules.1 Fourier Transform Infrared spectroscopy (FTIR) was utilized to evaluate the oxygen content and infrared absorbance in the HF laser bandwidth (2.6-3 microns). The bulk absorption coefficient over this bandwidth was quantified by performing laser absorption calorimetry. Electrical properties were obtained by performing Hall measurements at room temperature and 77 K, and the carrier concentration and impurity type were determined. The thermal conductivity was measured directly utilizing the Fourier technique, and the coefficient of thermal expansion was determined for room temperature to 600 °C via dilatometer measurements. Some of these procedures were repeated after the samples had been defect engineered, i.e., given a high temperature heat treatment, followed by a rapid quench.

Citation Download Citation

William A. Goodman "Thermophysical properties of optical silicon", Proc. SPIE 10289, Advanced Materials for Optics and Precision Structures: A Critical Review, 1028905 (28 July 1997); https://doi.org/10.1117/12.279815

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